个人简介

丁孙安博士，毕业于清华大学电子工程系。专注半导体与微电子领域研发工作30年，先后在中科院半导体所、德国马普学会、日本广岛大学、美国朗讯科技与英特尔公司、中科院苏州纳米所积累了丰富的专业教学、科学研究、技术开发、工程建设等方面的经验。研究方向涵盖硅基器件及大规模集成电路，化合物半导体光电器件，宽禁带新型半导体材料等；技术上精通纳米材料的各种高精表征测试，器件工艺开发及失效分析等；工程上擅长大型实验室和先进研发平台的规划、设计、建设与管理。在国际高水平刊物上发表60多篇学术论文，并拥有近20项发明专利。

招聘信息

丁孙安博士课题组常年招聘博士后、科研助理，招收博士生、硕士生、本科实习生，有意应聘者请将简历（格式PDF）发送至以下邮箱，以“招聘岗位_应聘者姓名”为题。

联系方式：dingsa@sustech.edu.cn

教育经历

1992年，中国科学院半导体研究所，博士学位

1988年，清华大学，硕士学位

1986年，清华大学，学士学位

工作经历

2021年5月至今，南方科技大学，研究教授

2014年11月至2021年5月，中科院苏州纳米所，研究员

2005年3月至2014年11月，美国英特尔公司，高级工程师、经理

2000年5月至2005年3月，美国朗讯科技公司，研究工程师

1998年4月至2000年5月，美国缅因大学，访问科学家

1997年4月至1998年4月，日本广岛大学，研究教授

1994年6月至1996年11月，德国马普学会，博士后

1992年7月至1994年6月，中科院半导体研究所，助理研究员

获得奖项

• 2017年 苏州市高层次短缺优秀人才

• 2016年 江苏省“双创”团队领军人才；

• 2016年 苏州工业园区高层次领军人才

• 2015年 江苏省“双创”个人领军；

• 2014年 苏州工业园区国际型科教领军人才

• 2010年英特尔全球奖获得者，

• 1997年中国科学院科学技术成果奖，二等奖  

研究方向

集成电路先进材料与工艺开发

宽禁带及超宽禁带半导体材料与器件研发

表面科学分析与异质界面调控

薄膜材料与半导体器件表征分析

代表性论文

1. Direct Observation of One-Dimensional Peierls-type Charge Density Wave in Twin Boundaries of Monolayer MoTe2. Wang, Y. Wu, Y. Yu, A. Chen, H. Li, W. Ren, S. Lu, S. Ding*, H. Yang, Q.K. Xue, F.S. Li*, G. Wang*, ACS Nano, 14 (2020) 8299-8306.

2. Large-cale quantification of aluminum in AlxGa1‐xN alloys by ToF-SIMS: The benefit of secondary cluster ions. ong Huang, Sunan Ding*, Hui Yang, , Surf Interface Anal., 52 (2020) 311-317.

3. Anisotropy and in-plane polarization of low-symmetrical β-Ga2O3 single crystal in the deep ultraviolet band. Mu, X. Chen, G. He, Z. Jia, J. Ye, B. Fu, J. Zhang, S. Ding, X. Tao, , Applied Surface Science, 527 (2020) 146648.

4. Long-Wavelength InAs/GaSb Superlattice Detectors on InAs Substrates With n-on-p Polarity. J.F. Liu, Y. Teng, X.J. Hao, Y. Zhao, Q.H. Wu, X. Li, H. Zhu, Y. Chen, R. Huang, S. Ding, Y. Huang, , IEEE Journal of Quantum Electronics, 56 (2020) 6.

5. The Significant Effect of Carbon and Oxygen Contaminants at Pd/p‐GaN Interface on Its Ohmic Contact Characteristics. Z. Li, R. Huang, X. Chen, H. Wang, B. Feng, G. He, Z. Huang, F. Li, J. Liu*, L. Zhang, T. Liu, S. Ding*, , Phys. Status Solidi A, 218 (2020) 2000603.

6. Interdigital Structure Enhanced the Current Spreading and Light Output Power of GaN-Based Light Emitting Diodes. J. Ding*, L.J. Che, X. Chen, T. Zhang, Y.D. Huang, Z.L. Huang, Z.M. Zeng, H.L. Zhang, S. Ding*, H. Yang, , IEEE Access, 8 (2020) 105972-105979.

7. Investigation of β-Ga2O3 film growth mechanism on c-plane sapphire substrate by ozone molecular beam epitaxy. Boyuan Feng, Zhengcheng Li, Feiyu Cheng, Leilei Xu, Tong Liu, Zengli Huang, Fangsen Li, Jiagui Feng, Xiao Chen, Ying Wu, Gaohang He* and Sunan Ding*, , Physica Status Solidi A 2020, 2000457

8. The abnormal aging phenomena in GaN-based near-ultraviolet laser diodes. Jin Wang, Meixin Feng*, Rui Zhou, Qian Sun*, Jianxun Liu, Yingnan Huang, Yu Zhou, Hongwei Gao, Xinhe Zheng*, Masao Ikeda, Rong Huang, Fangsen Li, An DingSun; Hui Yang;, Appl. Phys. 52 (2019) 275104 (5pp)

9. INTERFACE ANALYSIS OF TIN/N-GAN OHMIC CONTACTS WITH HIGH THERMAL STABILITY. Yafeng Zhuab,Rong Huanga,Zhengcheng Lia,Hui Haoa,Yuxin Ana,Tong Liua,Yanfei Zhaoa,Yang Shena,Yun Guob,Fangsen Lia,SunanDinga, Applied Surface Science 2019, 481, 1148-1153

10. STABLE ADSORPTION OF SINGLE GOLD ATOMS ON THE SrTiO3(111)-(9 × 9) RECONSTRUCTED SURFACE. Jiagui Feng,,† Sunan Ding,† and Jiandong Guo‡ . J. Phys. Chem. C 2019,123, 4866-4870.

11. REMOTE PLASMA-ENHANCED ATOMIC LAYER DEPOSITION OF GALIUM OXIDE THIN FILMS WITH NH3 PLASMA PRETREATMENT. H. Hao‡, X. Chen‡, Z.C. Li, Y. Shen, H. Wang, Y.F. Zhao, R. Huang, T. Liu, J. Liang, Y.X. An, Q. Peng, S.A. Ding*, J. of Semiconductors, 2019 Vol. 40, 012860

12. ION SPUTTER INDUCED INTERFACIAL REACION IN PROTOTYPICAL METAL-GaN SYSTEM. Huang, R.; Li, F *.; Liu, T.; Zhao, Y.; Zhu, Y.; Shen, Y.; Lu, X.; Huang, Z.; Liu, J.; Zhang, L.; Zhang, S.; Li, Z.; Dingsun, A. *; Yang, H., Sci. Rep. 2018, 8 (1), 8521.

13. ANGULAR DEPENDENT XPS STUDY OF SURFACE BAND BENDING ON Ga-POLAR n-GaN GaN. Huang, R.; Liu, T.; Zhao, Y.; Zhu, Y.; Huang, Z.; Li, F.*; Liu, J.; Zhang, L.; Zhang, S.; Dingsun, A.*; Yang, H., Appl. Surf. Sci. 2018, 440, 637-642.

14. STUDY ON THE MEASUREMENT ACCURACY OF CIRCULAR TRANSMISSION LINE MODEL FOR LOW-RESISTANCE OHMIC CONTACTS ON III-V WIDE BAND-GAP SEMICONDUCTORS. T. Liu, R. Huang, F. Li, Z. Huang, J. Zhang, J. Liu, L. Zhang, S. Zhang, A. Dingsun*，H. Yang, Current Applied Physics 2018, 18 (7), 853-858.

15. REMOTE PLASMA-ENHANCED ATOMIC LAYER DEPOSITION OF METALLIC TiN FILMS WITH LOW WORK FUNCTION AND HIGH UNIFORMITY, Y. Zhu, F. Li, R. Huang, T. Liu, Y. Zhao, Y. Shen, J. Zhang, A. Dingsun*，Y. Guo, J. Vac. Sci. & Tech. A 2018, 36 (4), 041501.

16. CONTROLLABLE PROCESS OF NANOSTRUCTURED GaN BY MASKLESS INDUCTIVELY COUPLED PLASMA (ICP) ETCHING，Zhao, Yanfei; Wang, Hu; Zhang, Wei; Li, Jiadong; Shen, Yang; Zhang, Jian*; Dingsun, An*,Journal of Micromech. and Microengin., Article reference: JMM-103132

17. THERMAL STABILITY STUDY OF GaP/HIGH-k DIELECTRICS INTERFACES, Xinglu Wang, Yanfei Zhao, Rong Huang, Fangsen Li, Xiaoming Lu, Yang Shen, Hu Wang, Dawei Shao, Baimei Tan, Jian Zhang, Xinjian Xie, An Dingsun*, and Hong Dong*，Advanced Materials Interface (Published online. DOI: 10.1002/admi.2017 00609)

18.  p-GaN GATE ENHANCEMENT-MODE HEMT THROUGH A HIGH TOLERANCE SELF-TERMINATED ETCHING PROCESS, Y. Zhou, Y. Zhong, H. Gao, S. Dai, J. He, M. Feng, Y. Zhao, Q. Sun, An DingSun, and H. Yang, IEEE Journal of the Electron Devices Society (2017, VOLUME 5, NO. 5, SEPTEMBER 2017).

19. THE GROWTH OF THE METALLIC ZrNx THIN FILMS ON p-GaN SUBSTRATE BY PULSED LASER DEPOSITION，Chengyan Gu; Zhanpeng Sui; Yuxiong Li; Haoyu Chu; Sunan Ding; Yanfei Zhao，Chunping Jiang，Applied Surface Science 433, 306 (2017).

20. SELF-TERMINATED ETCHING OF GAN WITH A HIGH SELECTIVITY OVER ALGAN UNDER INDUCTIVELY COUPLED CL2/N2/O2 PLASMA WITH A LOW-ENERGY ION BOMBARDMENT, Yaozong Zhong, Yu Zhou*, Hongwei Gao, Shujun Dai, Junlei He, Meixin Feng, Qian Sun*, Jijun Zhang, Yanfei Zhao, An DingSun, Hui Yang, Applied surface science 420, 817 (2017).

21. NEW TECHNOLOGIES AND CHALLENGES IN CHARACTERIZATION OF III-V EPITAXY COMPOUNDS  Sunan Ding  Invited talk in the 11th Annual Wireless and Optical Communications Conference, Newark, NJ, April 26-27, 2002

22. STOICHIOMETRY AND MICROSTRUCTURE EFFECTS ON TUNGSTEN OXIDE CHEMIRESISTIVE FILMS   S. C. Moulzolf, S. A. Ding, R. J. Lad,  Sens. Actuators, B  (2001), B77(1-2),  375-382.  

23. IN-SITU STRUCTURAL, CHEMICAL, AND ELECTRICAL CHARACTERIZATION OF WO3 SENSOR THIN FILMS   S. A. Ding, C. Kim, and R. J. Lad,  Presented at 46th International Symposium of the American Vacuum Society, Seattle, Oct. 25-29, 1999.

24. QUANTUM CONFINEMENT EFFECT IN SELF-ASSEMBLED, NANOMETER SILICON DOTS                S. A. Ding, M. Ikeda, S. Miyazaki, and M. Hirose, Appl. Phys. Letts. 73, (1998), 3881.

25. ELECTRONIC BAND STRUCTURE OF ZINC BLENDE    S. R. Barman, S. A. Ding, G. Neuhold, D. Wolfframm, D. A. Evans, and K. Horn,   Phys. Rev. B, 58, (1998), 7053.

26. VALENCE-BAND DISCONTINUITY AT A CUBIC GaN/GaAs HETEROJUNCTION MEASURED BY SYNCHROTRON-RADIATION PHOTOEMISSION SPECTROSCOPY  S. A. Ding, S. R. Barman, K. Horn, H. Yang, B. Yang, O. Brandt and K. Ploog  Appl. Phys. Letts. 70, (1997), 2407.

27. A NEW STRUCTURE OF In-BASED OHMIC CONTACTS TO n-TYPE GaAs  S. A. Ding and C. C. Hsu,   Appl. Phys. A 62, (1996), 241-245.

28. ELECTRONIC STRUCTURE OF WURTZITE-GaN STUDIED BY PHOTOELECTRON SPECTROSCOPY     S. A. Ding, S. R. Barman, V. L. Alperovich, K. Horn  Presented at the 23rd Intern. Conf. on the Physics of Semiconductor, Berlin, July 21-26, 1996.

29. EVIDENCE OF MOTT-HOBBARD AND BIPOLARONIC BEHAVIOR IN PHOTOEMISSION SPECTRA OF ALKALI METAL/GaAs(110) INTERFACES.    V. L. Alperovich, S. A. Ding, S. R. Barman, K. Horn   Presented at the 23rd Intern. Conf. on the Physics of Semiconductor, Berlin, July 21-26, 1996.

30. ELECTRONIC STRUCTURE OF CUBIC GALLIUM NITRIDE FILMS GROWN ON GaAs(100)   S. A. Ding, G. Neuhold, J. H. Weaver, P. Haeberle and K. Horn  J. Vac. Sci. Technol.  A14(3), (1996), 819.

31. RECENT DEVELOPMENTS IN OHMIC CONTACT FOR III-V COMPOUNDS SEMICONDUCTORS (Review Article)  C. C. Hsu and S. A. Ding   Chinese J. Vac. Sci. and Technol., vol.14, No.2 (1994).

32. EFFECTS OF DEEP CENTERS AT PtSi/Si INTERFACES AND HYDROGENATION     C. C. Hsu and S. A. Ding    Appl. Surface Science, 70/71, (1993), 438.

33. THE ADSORPTION OF OXYGEN ON FeSi SURFACES  S. A. Ding, M. S. Ma, J. X. Wu, and C. C. Hsu,   Surface Science, 267/270, (1992), 1022.

34. ELECTRONIC PROPERTIES OF THE Cr-Si(111) INTERFACES   C. C. Hsu, B. Q. Li and S. A. Ding    Vacuum Vol.41, (1990), 690.